Surface States of Electrified Binary Semiconductors

S. G. Davison, Z. L. Miskovic, F. O. Goodman

Department of Applied Mathematics, University of Waterloo
Waterloo, Ontario, Canada, N2L 3G1

and R. A. English

Condensed Matter Theory Group, Blackett Laboratory, Imperial College
London, SW7 2AZ, UK

Abstract:

Using the recursive-Green-function (RGF) technique, we investigate the surface states of an electrified binary semiconductor, modelled by a chain of alternating s and p orbitals. The RGF provides the surface density of states (SDOS), which displays a quasi-Stark-ladder distribution of the energy levels in the two bands at the surface atom. The SDOS are discussed in terms of the applied-field and surface-perturbation parameters.

last updated Sat Oct 20 00:47 EDT 2001 by RAE